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PHP23NQ11T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
110 -
-
V
99
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 7 2
3
4
V
voltage
and 8
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 7 -
-
4.4 V
and 8
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 7 1
-
-
V
and 8
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 13 A; Tj = 175 °C;
see Figure 9 and 10
-
-
10
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
-
132 189 mΩ
VGS = 10 V; ID = 13 A; Tj = 25 °C; see Figure 9 -
and 10
49
70
mΩ
Dynamic characteristics
QG(tot)
total gate charge
ID = 23 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C;
-
22
-
nC
QGS
gate-source charge
see Figure 11
-
5
-
nC
QGD
gate-drain charge
-
10
-
nC
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
830 -
pF
Coss
output capacitance
see Figure 12
-
140 -
pF
Crss
reverse transfer
capacitance
-
85
-
pF
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 50 V; RL = 2.2 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
-
8
-
ns
-
39
-
ns
-
26
-
ns
-
24
-
ns
VSD
source-drain voltage IS = 11 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
0.9 1.5 V
trr
reverse recovery time IS = 11 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
-
64
-
ns
-
120 -
nC
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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