PHP23NQ11T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PHP23NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1 and 3
-
-
110 V
-
-
23 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
100 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 23 A;
V_DS = 80 V; T_j = 25 °C;
see Figure 11
-
10 -
nC
Static characteristics
R_DSon drain-source
V_GS = 10 V; I_D = 13 A; T_j = 25 °C; -
on-state resistance see Figure 9 and 10
49 70 mΩ