PHP110NQ06LT Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PHP110NQ06LT
N-channel TrenchMOS logic level FET
15
R_DSon
(mΩ)
T_j = 25 °C
10
5
03ap96
V_GS = 4.2 V 4.4 V
4.6 V
5V
10 V
0
0
80
160
240
I_D (A)
03ne89
2
a
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
VGS
(V)
I_D = 25 A
T_j = 25 °C
8
03aq00
10⁴
C
(pF)
03ap99
C_iss
6
10³
14 V
V_DD = 44 V
4
C_oss
2
0
0
20
40
60
80
100
Q_G (nC)
10²
10^−2
10^−1
1
C_rss
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP110NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
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