PHP110NQ06LT Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PHP110NQ06LT
N-channel TrenchMOS logic level FET
240
I_D
(A)
T_j = 25 °C
160
80
0
0
1
10 V 5 V
03ap95
4.6 V
4.4 V
4.2 V
4V
3.6 V
3.2 V
V_GS = 2.8 V
2
3 _{VDS (V)} 4
75
V_DS > I_D x R_DSon
I_D
(A)
50
03ap97
25
0
0
T_j = 175 °C
25 °C
1
2
3
4
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
2.5
V_GS(th)
(V)
2
03aa33
max
10^-1
I_D
(A)
10^-2
03aa36
1.5
typ
1
min
10^-3
min
typ
max
10^-4
0.5
10^-5
0
-60
0
60
120
180
T_j (°C)
10^-6
0
1
2
3
V_GS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHP110NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
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