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PHP110NQ06LT Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
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NXP Semiconductors
PHP110NQ06LT
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source
ID = 250 µA; VGS = 0 V; Tj = -55 °C
50
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
55
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 7 0.5
voltage
and 8
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 7 1
and 8
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 7 -
and 8
IDSS
drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
IGSS
gate leakage current VGS = 15 V; VDS = 0 V; Tj = 25 °C
-
VGS = -15 V; VDS = 0 V; Tj = 25 °C
-
RDSon
drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 9
-
resistance
and 10
VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 9 -
and 10
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 10 -
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 -
and 10
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 44 V; VGS = 5 V; Tj = 25 °C;
-
QGS
gate-source charge
see Figure 11
-
QGD
gate-drain charge
-
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 12
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
-
tr
rise time
RG(ext) = 10 Ω; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
1.5 2
V
-
2.2 V
-
1
µA
-
500 µA
2
100 nA
2
100 nA
7.1 8.4 mΩ
12.4 14
mΩ
-
9.3 mΩ
6.2 7
mΩ
45
-
nC
9
-
nC
17
-
nC
3960 -
pF
520 -
pF
205 -
pF
29
-
ns
123 -
ns
131 -
ns
86
-
ns
0.85 1.2 V
69
-
ns
72
-
nC
PHP110NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
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