PHP110NQ06LT Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PHP110NQ06LT
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to
mounting base
see Figure 4
thermal resistance from junction to ambient vertical in still air
Min Typ Max Unit
-
-
0.75 K/W
-
60
-
K/W
1
03ap93
Z_th(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10^−1 0.05
0.02
single pulse
P
δ = ^tp
T
Fig 4.
10^−2
10^−4
10^−3
10^−2
t_p
t
T
10^−1
1
t_p (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP110NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
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