PBHV9115Z Datasheet, PDF (7/12 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
−10
V_CEsat
(V)
−1
PBHV9115Z
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
006aab170
−10
V_CEsat
(V)
−1
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−10^−1
(1)
(2)
(3)
−10^−2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
006aab172
−10^−1
(1)
(2)
(3)
−10^−2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 20
(2) I_C/I_B = 10
(3) I_C/I_B = 5
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
006aab173
10
(1)
1
(2)
(3)
10
(1) (2) (3)
1
10^−1
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10^−1
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 20
(2) I_C/I_B = 10
(3) I_C/I_B = 5
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9115Z_2
Product data sheet
Rev. 02 — 9 January 2009
© NXP B.V. 2009. All rights reserved.
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