PBHV9115Z Datasheet, PDF (3/12 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9115Z
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
−200 V
−150 V
−6
V
−1
A
−2
A
−400 mA
0.7
W
1.4
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².
1600
P_tot
(1)
(mW)
1200
006aab155
800
(2)
400
0
−75
−25
25
75
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
PBHV9115Z_2
Product data sheet
Rev. 02 — 9 January 2009
© NXP B.V. 2009. All rights reserved.
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