PBHV9115Z Datasheet, PDF (5/12 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9115Z
150 V, 1 A PNP high-voltage low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −120 V; I_E = 0 A
current
V_CB = −120 V; I_E = 0 A;
T_j = 150 °C
I_CES
collector-emitter
V_CE = −120 V; V_BE = 0 A
cut-off current
I_EBO
emitter-base cut-off V_EB = −4 V; I_C = 0 A
current
h_FE
V_CEsat
V_BEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
V_CE = −10 V
I_C = −50 mA
I_C = −100 mA
I_C = −1 A
I_C = −100 mA; I_B = −10 mA
I_C = −100 mA; I_B = −20 mA
I_C = −500 mA;
I_B = −100 mA
I_C = −1 A; I_B = −200 mA
f_T
transition frequency V_CE = −10 V; I_E = −10 mA;
f = 100 MHz
C_c
collector capacitance V_CB = −20 V; I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = −0.5 V; I_C = i_c = 0 A;
f = 1 MHz
t_d
delay time
t_r
rise time
V_CC = −6 V; I_C = −0.5 A;
I_Bon = −0.1 A; I_Boff = 0.1 A
t_on
turn-on time
t_s
storage time
t_f
fall time
t_off
turn-off time
Min
-
-
-
-
100
100
[1] ₁₀
-
-
-
[1] _-
-
-
-
-
-
-
-
-
-
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
-
−100 nA
-
−10 µA
-
−100 nA
-
−100 nA
220 -
220 -
30 -
−60 −120 mV
−50 −100 mV
−150 −300 mV
−1.05 −1.2 V
115 -
MHz
10 -
pF
150 -
pF
8
-
ns
282 -
ns
290 -
ns
430 -
ns
300 -
ns
730 -
ns
PBHV9115Z_2
Product data sheet
Rev. 02 — 9 January 2009
© NXP B.V. 2009. All rights reserved.
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