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PBHV9115Z Datasheet, PDF (1/12 Pages) NXP Semiconductors – 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor | |||
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PBHV9115Z
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 02 â 9 January 2009
Product data sheet
1. Product proï¬le
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8115Z.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualiï¬ed
1.3 Applications
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch mode power supply
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = â10 V;
IC = â50 mA
Min Typ Max Unit
-
-
â150 V
-
-
â1 A
100 220 -
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