PBHV9050Z.115 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
−1
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
PBHV9050Z
500 V, 250 mA PNP high-voltage low V_CEsat (BISS) transistor
006aab696
−1
V_CEsat
(V)
−10^−1
006aab697
(1)
(2)
(3)
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
10⁴
R_CEsat
(Ω)
10³
006aab698
10²
(1)
(2)
10
(3)
1
10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 20
(2) I_C/I_B = 10
(3) I_C/I_B = 5
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
10⁴
R_CEsat
(Ω)
10³
006aab699
10²
(1)
10
(2)
1
(3)
10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 20
(2) I_C/I_B = 10
(3) I_C/I_B = 5
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
7 of 13