PBHV9050Z.115 Datasheet, PDF (2/13 Pages) NXP Semiconductors – 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V_CEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
base
collector
emitter
collector
Simplified outline Graphic symbol
4
2, 4
123
1
3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBHV9050Z
SC-73
plastic surface-mounted package with increased
heat sink; 4 leads
Version
SOT223
4. Marking
Table 4. Marking codes
Type number
PBHV9050Z
Marking code
V9050Z
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_CESM
collector-emitter peak
V_BE = 0
-
voltage
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
Max Unit
−500 V
−500 V
−500 V
−6
V
−0.25 A
−0.5 A
−200 mA
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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