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PBHV9050Z.115 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor | |||
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PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 1 â 19 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 High voltage
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 AEC-Q101 qualified
 Medium power SMD plastic package
1.3 Applications
 Electronic ballasts
 LED driver for LED chain module
 LCD backlighting
 Automotive motor management
 Flyback converters
 Hook switch for wired telecom
 Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
VBE = 0
open base
VCE = â10 V;
IC = â50 mA
Min Typ Max Unit
-
-
â500 V
-
-
[1] 80
-
â500 V
-
â0.25 A
160 300
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