PBHV9050Z.115 Datasheet, PDF (3/13 Pages) NXP Semiconductors – 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V_CEsat (BISS) transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
700
mW
1400 mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².
1600
P_tot
(1)
(mW)
1200
006aab155
800
(2)
400
0
−75
−25
25
75
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
175 K/W
[2] _-
-
90 K/W
-
-
20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².
PBHV9050Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 August 2010
© NXP B.V. 2010. All rights reserved.
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