BUK7513-75B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7613-75B
TrenchMOS™ standard level FET
250
ID
(A)
200
Label is VGS (V)
150
100
50
0
0
2
4
03nm78
20
10
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
6
8
10
VDS (V)
30
RDSon
(mΩ)
25
20
15
10
5
5
03nm77
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
40
03nm79
2.4
RDSon
Label is VGS (V)
a
(mΩ)
5.5 ₆
30
6.5
7
7.5
1.6
8
20
10
0.8
10
03nb25
0
0
60
120 _{ID (A)} 180
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11237
Product data
Rev. 01 — 14 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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