BUK7513-75B Datasheet, PDF (2/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7613-75B
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; Figure 1
I_DR
reverse drain current (DC)
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; I_D = 75 A;
V_DS ≤ 75 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_mb = 25 °C
Min
Max Unit
-
75
V
-
75
V
-
±20
V
-
75
A
-
54
A
-
304
A
-
157
W
−55
+175 °C
−55
+175 °C
-
75
A
-
304
A
-
125
mJ
9397 750 11237
Product data
Rev. 01 — 14 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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