BUK7513-75B Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7613-75B
TrenchMOS™ standard level FET
120
Pder
(%)
80
40
03na19
100
ID
(A)
75
50
25
03nm83
0
0
50
100
150
200
Tmb _(°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
V_GS ≥ 10 V
100
150
200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
Limit RDSon = VDS/ID
03nm81
102
tp = 10 µ s
100 µ s
10
1
1
DC
1 ms
10 ms
100 ms
10
102
VDS (V)
103
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11237
Product data
Rev. 01 — 14 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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