BUK7513-75B Datasheet, PDF (4/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7613-75B
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
R_th(j-mb) thermal resistance from junction to
mounting base
R_th(j-a) thermal resistance from junction to
ambient
SOT78 (TO-220AB)
SOT404 (D²-PAK)
Conditions
Figure 4
Min Typ Max Unit
- - 0.95 K/W
vertical in still air
- 60 - K/W
mounted on a printed circuit board; minimum - 50 - K/W
footprint
4.1 Transient thermal impedance
1
Zth(j-mb) ^{δ = 0.5}
(K/W) _0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nm82
P
δ
=
tp
T
tp
t
T
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11237
Product data
Rev. 01 — 14 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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