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| BUK7105-40AIE Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics â¦continued
Symbol
Parameter
Conditions
LD
internal drain
inductance
LS
internal source
inductance
Source-drain diode
from upper edge of drain mounting base to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
VSD
source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; see
Figure 17
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
96
-
ns
-
224 -
nC
BUK7105-40AIE_5
Product data sheet
Rev. 05 â 9 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15
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