BUK7105-40AIE Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

BUK7105-40AIE
N-channel TrenchPLUS standard level FET
Rev. 05 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Reduced component count due to
integrated current sensor
„ Suitable for standard level gate drive
sources
1.3 Applications
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
40 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
155 A
see Figure 2; see Figure 3;
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 50 A;
T_j = 25 °C; see Figure 7;
see Figure 8
-
4.5 5
mΩ
I_D/I_sense ratio of drain current T_j > -55 °C; T_j < 175 °C;
to sense current
V_GS > 10 V
450 500 550
[1] Current is limited by power dissipation chip rating.