English
Language : 

BUK7105-40AIE Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET
◁
NXP Semiconductors
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 9
IDSS
V(BR)GSS
IGSS
RDSon
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
gate-source breakdown IG = 1 mA; VDS = 0 V; Tj < 175 °C;
voltage
Tj > -55 °C
IG = -1 mA; VDS = 0 V; Tj < 175 °C;
Tj > -55 °C
gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C
VDS = 0 V; VGS = -10 V; Tj = 25 °C
VDS = 0 V; VGS = 10 V; Tj = 175 °C
VDS = 0 V; VGS = -10 V; Tj = 175 °C
drain-source on-state VGS = 10 V; ID = 50 A; Tj = 25 °C; see
resistance
Figure 7; see Figure 8
VGS = 10 V; ID = 50 A; Tj = 175 °C; see
Figure 7; see Figure 8
R(D-ISENSE)on drain-ISENSE on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C; see
resistance
Figure 16
VGS = 10 V; ID = 100 mA; Tj = 175 °C; see
Figure 16
ID/Isense
ratio of drain current to VGS > 10 V; Tj > -55 °C; Tj < 175 °C
sense current
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
ID = 25 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
BUK7105-40AIE_5
Product data sheet
Rev. 05 — 9 February 2009
Min Typ Max Unit
40
-
-
V
36
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.1 10
µA
-
-
250 µA
20
22
-
V
20
22
-
V
-
22
1000 nA
-
22
1000 nA
-
-
10
µA
-
-
10
µA
-
4.5 5
mΩ
-
-
9.5 mΩ
0.98 1.08 1.18 Ω
1.86 2.05 2.24 Ω
450 500 550
-
120 127 nC
-
19
22
nC
-
50
60
nC
-
4300 5000 pF
-
1400 1670 pF
-
820 1100 pF
-
35
-
ns
-
115 -
ns
-
155 -
ns
-
110 -
ns
© NXP B.V. 2009. All rights reserved.
6 of 15
 ▷