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BUK7105-40AIE Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET
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NXP Semiconductors
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3
IDM
Ptot
IGS(CL)
peak drain current
total power dissipation
gate-source clamping
current
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tmb = 100 °C; VGS = 10 V; see Figure 2;
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
Tmb = 25 °C; see Figure 1
continuous
pulsed; tp = 5 ms; δ = 0.01
Tmb = 25 °C
ISM
peak source current
Avalance ruggedness
tp ≤ 10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
Electrostatic discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ
voltage
Min
-
-
-20
[1] -
[2] -
[2] -
-
-
-
-
-55
-55
[1] -
[2] -
-
-
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
20
V
155 A
75
A
75
A
620 A
272 W
10
mA
50
mA
175 °C
175 °C
155 A
75
A
620 A
1.46 J
6
kV
BUK7105-40AIE_5
Product data sheet
Rev. 05 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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