BFG520 Datasheet, PDF (7/14 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
handbook^−,²h⁰alfpage
dim
(dB)
−30
MEA975
−40
−50
−60
−70
0
10
20
30
40
50
IC (mA)
handbook^−,²h⁰alfpage
d2
(dB)
−30
MEA974
−40
−50
−60
−70
0
10
20
30
40
50
IC (mA)
Fig.11 Intermodulation distortion as a function of
collector current.
Fig.12 Second order intermodulation distortion as
a function of collector current.
5
handbook, halfpage
Fmin
(dB)
4
3
Gass
MRA682
20
f = 900 MHz
1000 MHz
Gass
(dB)
15
2000 MHz
10
2000 MHz
2
1000 MHz
1 _{900 MHz}
500 MHz
0
1
5
Fmin
0
10
IC (mA)
−5
10²
V _CE = 6 V; T_amb = 25 °C.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
5
handbook, halfpage
Fmin
(dB)
4
IC = 5 mA
20 mA
Gass
MRA683
20
Gass
(dB)
15
3
10
2
20 mA
1 _{5 mA}
0
10²
Fmin
10³
f (MHz)
5
0
−5
10⁴
V_CE = 6 V; T_amb = 25 °C.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
Rev. 04 - 23 November 2007
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