BFG520 Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
DESCRIPTION
BFG520 (Fig.1) Code: %MF
1 collector
2 base
3 emitter
4 emitter
BFG520/X (Fig.1) Code: %ML
1 collector
2 emitter
3 base
4 emitter
BFG520/XR (Fig.2) Code: %MP
1 collector
2 emitter
3 base
4 emitter
fpage
4
3
1
Top view
2
MSB014
Fig.1 SOT143B.
handbook, 2 co3lumns
4
2
1
Top view
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
V_CBO
V_CEO
I_c
P_tot
h_FE
C_re
f_T
G_UM
S₂₁²
F
PARAMETER
CONDITIONS
collector-base voltage open emitter
collector-emitter voltage open base
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
up to T_s = 88 °C; note 1
I_C = 20 mA; V_CE = 6 V; T_j = 25 °C
I_C = 0; V_CB = 6 V; f = 1 MHz
I_C = 20 mA; V_CE = 6 V; f = 1 GHz;
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 900 MHz;
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 2 GHz;
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 900 MHz;
T_amb = 25 °C
Γ_s = Γ_opt ; I_c = 5 mA; V_CE = 6 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt ; I_C = 20 mA; V_CE = 6 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt ; I_C = 5 mA; V_CE = 8 V;
f = 2 GHz; T_amb = 25 °C
MIN.
−
−
−
−
60
−
−
TYP.
−
−
−
−
120
0.3
9
MAX.
20
15
70
300
250
−
−
UNIT
V
V
mA
mW
pF
GHz
−
19
−
dB
−
13
−
dB
17
18
−
dB
−
1.1
1.6
dB
−
1.6
2.1
dB
−
1.9
−
dB
Rev. 04 - 23 November 2007
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