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BFG520 Datasheet, PDF (4/14 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor
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NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Ce
Cc
Cre
fT
GUM
S212
F
PL1
ITO
Vo
d2
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain (note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
IE = 0; VCB = 6 V
IC = 20 mA; VCE = 6 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
note 2
note 3
IC = 20 mA; VCE = 6 V; Vo = 75 mV;
Tamb = 25 °C; f(p+q) = 810 MHz
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz
MIN.
−
60
−
−
−
−
TYP.
−
120
1
0.6
0.3
9
−
19
−
13
17 18
−
1.1
−
1.6
−
1.9
−
17
−
26
−
275
−
−50
MAX. UNIT
50
nA
250
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
1.6 dB
2.1 dB
−
dB
−
dBm
−
dBm
−
mV
−
dB
Rev. 04 - 23 November 2007
4 of 14
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