BFG520 Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 88 °C; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
70
300
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 88 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
290 K/W
Rev. 04 - 23 November 2007
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