BFG505 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
andbo_Fo_mk, _ih_n5alfpageIC = 1.25 mA
(dB)
4
5 mA
Gass
MRA651
20
Gass
(dB)
15
3
10
2
5 mA
1
1.25 mA
Fmin
0
10²
10³
f (MHz)
5
0
−5
10⁴
V_CE = 6 V.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
pot. unst.
region
135°
0.5
stability
circle
0.2
0.2
0.5
180° 0
0.2
90°
1
2
45°
5
Fmin = 1. 2 dB
F = 1.5 dB^ΓOPT
1
2
5
F = 2 dB
F = 3 dB
5
1.0
0.8
0.6
0.4
0.2
0° 0
Z_o = 50 Ω.
V_CE = 6 V; I_c = 1.25 mA; f = 900 MHz.
0.5
−135°
1
−90°
2
−45°
MRA652
1.0
Fig.12 Noise circle figure.
Rev. 04 - 22 November 2007
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