BFG505 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG505
BFG505/X
collector
base
emitter
emitter
collector
emitter
base
emitter
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
BFG505
BFG505/X
CODE
%ME
%MK
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
S₂₁²
F
PARAMETER
CONDITIONS
collector-base voltage open emitter
collector-emitter voltage R_BE = 0
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
T_s ≤ 130 °C
V_CE = 6 V; I_C = 5 mA
V_CB = 6 V; I_C = i_c = 0; f = 1 MHz
V_CE = 6 V; I_C = 5 mA; f = 1 GHz
V_CE = 6 V; I_C = 5 mA;
T_amb = 25 °C; f = 900 MHz
V_CE = 6 V; I_C = 5 mA;
T_amb = 25 °C; f = 2 GHz
V_CE = 6 V; I_c = 5 mA;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; V_CE = 6 V; I_c = 1.25 mA;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; V_CE = 6 V; I_c = 5 mA;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; V_CE = 6 V; I_c = 1.25 mA;
T_amb = 25 °C; f = 2 GHz
MIN.
−
−
−
−
60
−
−
−
TYP.
−
−
−
−
120
0.2
9
20
MAX.
20
15
18
150
250
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
−
13
−
dB
16
17
−
dB
−
1.2
1.7
dB
−
1.6
2.1
dB
−
1.9
−
dB
Rev. 04 - 22 November 2007
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