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BFG505 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors
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NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral
power gain; note 1
S212
F
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
VCB = 6 V; IE = 0
IC = 5 mA; VCE = 6 V; see Fig.3
IC = ic = 0 VEB = 0.5 V; f = 1 MHz
VCB = 6 V; IE = ie = 0; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4
IC = 5 mA; VCE = 6 V; f = 1 GHz;
see Fig.5
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Ic = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
Ic = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 5 mA; VCE = 6 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
note 2
MIN.
−
60
−
−
−
−
−
−
16
−
−
−
−
−
TYP.
−
120
0.4
0.3
0.2
9
20
13
17
1.2
1.6
1.9
4
10
MAX. UNIT
50
nA
250
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
1.7
dB
2.1
dB
−
dB
−
dBm
−
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM
2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C;
=
10
log --(--1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB.
fp = 900 MHz; fq = 902 MHz;
measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
Rev. 04 - 22 November 2007
4 of 13
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