BFG505 Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN 9 GHz wideband transistors

NXP Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505; BFG505/X
250
handbook, halfpage
hFE
200
MRA639
150
100
50
0
10^−3
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 6 V.
Fig.3 DC current gain as a function of collector
current.
0.4
handbook, halfpage
Cre
(pF)
0.3
MRA640
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
handbook,¹h²alfpage
fT
(GHz)
8
MRA641
VCE = 6 V
VCE = 3 V
4
0
10^−1
1
10
10²
IC (mA)
T_amb = 25 °C; f = 1 GHz.
Fig.5 Transition frequency as a function of
collector current.
25
handbook, halfpage
gain
(dB)
20
GUM
MSG
15
MRA642
10
5
0
0
4
8
12
IC (mA)
V_CE = 6 V; f = 900 MHz.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.6 Gain as a function of collector current.
Rev. 04 - 22 November 2007
5 of 13