BCP69 Datasheet, PDF (7/13 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
10³
h_FE
mle305
10²
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
Fig 3.
V_CE = −1 V
BCP69-16: DC current gain as a function of
collector current; typical values
−1000
V_BE
(mV)
−800
mle304
−600
−2.4
I_C
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
006aab403
I_B (mA) = −18.0
−14.4
−10.8
−7.2
−16.2
−12.6
−9.0
−5.4
−3.6
−1.8
0
0
−1
−2
−3
−4
−5
V_CE (V)
Fig 4.
T_amb = 25 °C
BCP69-16: Collector current as a function of
collector-emitter voltage; typical values
−10³
V_CEsat
(mV)
−10²
mle306
−400
−10
−200
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
Fig 5.
V_CE = −1 V
BCP69-16: Base-emitter voltage as a function
of collector current; typical values
−1
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
Fig 6.
I_C/I_B = 10
BCP69-16: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCP69_6
Product data sheet
Rev. 06 — 2 December 2008
© NXP B.V. 2008. All rights reserved.
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