BCP69 Datasheet, PDF (6/13 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −25 V; I_E = 0 A
current
V_CB = −25 V; I_E = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off
V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
V_BE
C_c
DC current gain
BCP69
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
V_CE = −10 V;
I_C = −5 mA
V_CE = −1 V;
I_C = −500 mA
V_CE = −1 V; I_C = −1 A
V_CE = −1 V;
I_C = −500 mA
V_CE = −1 V;
I_C = −500 mA
V_CE = −1 V;
I_C = −500 mA
I_C = −1 A;
I_B = −100 mA
V_CE = −10 V;
I_C = −5 mA
V_CE = −1 V; I_C = −1 A
V_CB = −10 V;
I_E = i_e = 0 A;
f = 1 MHz
f_T
transition frequency V_CE = −5 V;
I_C = −50 mA;
f = 100 MHz
Min Typ Max Unit
-
-
−100 nA
-
-
−10 µA
-
-
−100 nA
50
-
85
-
60
-
100 -
140 -
160 -
-
-
-
-
-
-
-
28
-
375
-
250
230
375
−500 mV
−700 mV
−1
V
-
pF
40
140 -
MHz
BCP69_6
Product data sheet
Rev. 06 — 2 December 2008
© NXP B.V. 2008. All rights reserved.
6 of 13