BCP69 Datasheet, PDF (4/13 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
1.6
P_tot
(1)
(W)
1.2
(2)
0.8
(3)
0.4
mle311
0
−65
−5
55
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, mounting pad for collector 1 cm²
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
115
175
T_amb (°C)
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
R_th(j-sp)
thermal resistance from junction
to solder point
Min Typ Max Unit
[1] _-
-
200 K/W
[2] _-
-
125 K/W
[3] _-
-
89 K/W
-
-
15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
BCP69_6
Product data sheet
Rev. 06 — 2 December 2008
© NXP B.V. 2008. All rights reserved.
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