BC857BW115 Datasheet, PDF (7/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W; BC858W
1000
handbook, halfpage
hFE
(1)
800
MGT719
600
(2)
400
(3)
200
0
−10^−2 −10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857CW; V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
− 1200
ha_Vnd_Bb_Eook, halfpage
(mV)
− 1000
(1)
− 800
(2)
− 600
MGT720
− 400
(3)
− 200
0
− 10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857CW; V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
− 10⁴
handbook, halfpage
VCEsat
(mV)
− 10³
MGT721
− 10²
(1)
− 10
− 10^−1
(3) (2)
−1
− 10
− 10²
− 10³
IC (mA)
BC857CW; I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
− 1200
h_Va_Bnd_Eb_so_aok_t , halfpage
(mV)
− 1000
(1)
− 800
(2)
− 600
(3)
− 400
MGT722
− 200
0
− 10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857CW; I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
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