BC857BW115 Datasheet, PDF (5/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W; BC858W
500
handbook, halfpage
hFE
400
(1)
300
200
(2)
(3)
100
MGT711
0
−10^−2 −10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857AW; V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
− 1200
ha_Vn_Bdb_Eook, halfpage
(mV)
− 1000
(1)
− 800
(2)
− 600
(3)
− 400
MGT712
− 200
0
−10^−2 −10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857AW; V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
− 10⁴
handbook, halfpage
VCEsat
(mV)
− 10³
MGT713
− 10²
(1)
(3) (2)
− 10
− 10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857AW; I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
− 1200
h_Va_Bnd_Eb_so_ao_tk, halfpage
(mV)
− 1000
− 800
− 600
MGT714
(1)
(2)
(3)
− 400
− 200
0
− 10^−1
−1
− 10
− 10²
− 10³
IC (mA)
BC857AW; I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5