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BC857BW115 Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W; BC858W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
emitter-base cut-off current
DC current gain
BC856W
BC857W; BC858W
BC856AW; BC857AW
BC856BW; BC857BW
BC857CW
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ⤠300 μs; δ ⤠0.02.
CONDITIONS
MIN.
VCB = â30 V; IE = 0
â
VCB = â30 V; IE = 0;
â
Tj = 150 °C
VEB = â5 V; IC = 0
â
IC = â2 mA; VCE = â5 V
125
125
125
220
420
IC = â10 mA; IB = â0.5 mA â
IC = â100 mA; IB = â5 mA; â
note 1
IC = â10 mA; IB = â0.5 mA â
IC = â100 mA; IB = â5 mA; â
note 1
IC = â2 mA; VCE = â5 V
IC = â10 mA; VCE = â5 V
VCB = â10 V; IE = Ie = 0;
f = 1 MHz
â600
â
â
VEB = â0.5 V; IC = Ic = 0; â
f = 1 MHz
VCE = â5 V; IC = â10 mA; 100
f = 100 MHz
IC = â200 μA; VCE = â5 V; â
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
TYP.
â1
â
â
â
â
â
â
â
â75
â250
â700
â850
â650
â
â
â
â
â
MAX.
â15
â4
â100
475
800
250
475
800
â300
â600
â
â
â750
â820
3
12
â
10
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
2002 Feb 04
4
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