BC857BW115 Datasheet, PDF (3/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BC856W
BC857W
BC858W
collector-emitter voltage
BC856W
BC857W
BC858W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to
ambient
Note
1. Refer to SOT323 standard mounting conditions.
CONDITIONS
in free air; note 1
MIN.
MAX.
UNIT
−
−80
V
−
−50
V
−
−30
V
−
−65
V
−
−45
V
−
−30
V
−
−5
V
−
−100
mA
−
−200
mA
−
−200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
VALUE
625
UNIT
K/W
2002 Feb 04
3