PSMN5R0-80PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 80 V 4.7 mΩ standard level MOSFET

NXP Semiconductors
PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Min Typ Max Unit
-
0.8 1.2 V
-
56
-
ns
-
116 -
nC
250
I_D
(A)
200
150
100
50
0
0
20 ¹⁰ 6 ^5.5
003aad081
5
4.5
V_GS (V) = 4
1
2
3 _{VDS (V)} 4
10
R_DSon
(mΩ)
8
6
4
2
0
003aad082
V_GS (V) = 5
5.5
6
10
20
50
100
150
200
250
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
100
003aad083
I_D
(A)
80
60
40
20
T_j = 175 °C
25 °C
0
0
1
2
3
4
5
V_GS (V)
10000
C
(pF)
9000
003aad087
C_iss
8000
7000
6000
C_rss
5000
4000
3000
2
4
6
8 _{VGS (V)} 10
Fig 7. Transfer characteristics: drain current as a
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
function of gate-source voltage; typical values
PSMN5R0-80PS_2
Product data sheet
Rev. 02 — 23 June 2009
© NXP B.V. 2009. All rights reserved.
6 of 13