|
PSMN5R0-80PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 80 V 4.7 mΩ standard level MOSFET | |||
|
◁ |
NXP Semiconductors
PSMN5R0-80PS
N-channel 80 V 4.7 m⦠standard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ⤠80 V;
drain-source avalanche RGS = 50 â¦; unclamped
energy
Min Max Unit
-
80
V
-
80
V
-20 20
V
-
100 A
-
100 A
-
598 A
-
270 W
-55 175 °C
-55 175 °C
-
100 A
-
598 A
-
396 mJ
150
ID
(A)
100
(1)
003aad078
120
Pder
(%)
80
03aa16
50
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN5R0-80PS_2
Product data sheet
Rev. 02 â 23 June 2009
© NXP B.V. 2009. All rights reserved.
3 of 13
|
▷ |