PSMN5R0-80PS Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 80 V 4.7 mΩ standard level MOSFET

PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET
Rev. 02 — 23 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
-
-
80 V
-
-
100 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
270 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 40 V; see Figure 14;
see Figure 15
-
21 -
nC
Static characteristics
R_DSon
drain-source
V_GS = 10 V; I_D = 15 A;
on-state resistance T_j = 25 °C;
[1] -
3.7 4.7 mΩ
[1] Measured 3 mm from package.