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PSMN3R0-60PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 60 V 3.0 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 m⦠standard level MOSFET
200
ID
8
6
(A)
10
5
150
100
003aad674
4.5
50
VGS (V) = 4
0
0
0.5
1
1.5
2
VDS (V)
300
gfs
(S)
250
200
150
100
50
0
0
20
40
003aad680
60
80
100
ID (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
200
ID
(A)
150
100
003aad676
10â1
ID
(A)
10â2
10â3
10â4
03aa35
min typ max
50
Tj = 175 °C
Tj = 25 °C
10â5
0
0
2
4
6
VGS (V)
10â6
0
2
4
6
VGS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
PSMN3R0-60PS_1
Product data sheet
Rev. 01 â 23 November 2009
© NXP B.V. 2009. All rights reserved.
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