PSMN3R0-60PS Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 60 V 3.0 mΩ standard level MOSFET

PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
Rev. 01 — 23 November 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
60 V
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
[1] _-
-
100 A
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
306 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 80 A;
V_DS = 12 V; see Figure 13
and 14
-
28 -
nC
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11
and 12
-
2.4 3
mΩ
[1] Continuous current is limited by package.