PSMN3R0-60PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 60 V 3.0 mΩ standard level MOSFET

NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
120
I_D
(A)
100
(1)
80
60
40
20
0
0
50
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100
150
200
T_mb (°C)
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10⁴
I_D
(A)
10³
10²
Limit RDSon = V_DS / I_D
DC
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10 μs
100 μs
10
1 ms
10 ms
1
100 ms
10^−1
10^−1
1
10
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R0-60PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
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