English
Language : 

PSMN3R0-60PS Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 60 V 3.0 mΩ standard level MOSFET
◁
NXP Semiconductors
PSMN3R0-60PS
N-channel 60 V 3.0 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
54
-
-
V
60
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 8
2
3
4
V
voltage
and 9
VGSth
IDSS
IGSS
RDSon
ID = 1 mA; VDS= VGS; Tj = 175 °C; see Figure 9 1
ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 9 -
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
VDS = 60 V; VGS = 0 V; Tj = 175 °C
-
gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
resistance
see Figure 10
-
-
V
-
4.6 V
0.05 10
µA
-
500 µA
2
100 nA
2
100 nA
-
7.2 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
-
2.4 3
mΩ
RG
gate resistance
Dynamic characteristics
f = 1 MHz
-
1.1 -
Ω
QG(tot)
total gate charge
ID = 80 A; VDS = 12 V; VGS = 10 V;
see Figure 13 and 14
-
130 -
nC
QGS
gate-source charge
ID = 80 A; VDS = 12 V; VGS = 10 V;
see Figure 14 and 13
-
43
-
nC
QGD
gate-drain charge
ID = 80 A; VDS = 12 V; VGS = 10 V;
see Figure 13 and 14
-
28
-
nC
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
8079 -
pF
see Figure 15 and 16
Coss
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
971 -
pF
see Figure 15
Crss
reverse transfer
capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
492 -
pF
see Figure 15 and 16
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 30 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 1.5 Ω
-
31
-
ns
-
26
-
ns
-
77
-
ns
-
22
-
ns
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 -
0.88 1.2 V
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 30 V
-
54
-
ns
-
97
-
nC
PSMN3R0-60PS_1
Product data sheet
Rev. 01 — 23 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
 ▷