PMEG45A10EPD Datasheet, PDF (6/13 Pages) NXP Semiconductors – 45 V, 10 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
10²
I_F
(A)
10
(1)
1 ⁽²⁾
(3)
10^-1
10^-2
(4) (5) (6)
aaa-009168
10^-3
10^-4
0
0.2
0.4
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 100 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = -40 °C
0.6
0.8
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values (pulsed condition)
1.5
C_d
(nF)
1.0
PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
I_R(A) ¹
10^-1
10^-2
10^-3
aaa-009169
(1)
(2)
(3)
(4)
10^-4
10^-5
(5)
10^-6
10^-7
10^-8
(6)
10^-9
0
10
20
30
40
50
V_R (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 100 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = -40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values (pulsed condition)
aaa-012459
0.5
Fig. 6.
0
0
f = 1 MHz; T_amb = 25 °C
15
30
45
V_R (V)
Diode capacitance as a function of reverse voltage; typical values
PMEG45A10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
6 / 13