PMEG45A10EPD Datasheet, PDF (1/13 Pages) NXP Semiconductors – 45 V, 10 A low VF MEGA Schottky barrier rectifier

PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
16 December 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT1289 (CFP15) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 10 A
• Reverse voltage: V_R ≤ 45 V
• Low forward voltage
• High power capability due to clip-bonding technology and heat sink
• Small and thin SMD power plastic package, typical height 0.78 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Freewheeling application
• Reverse polarity protection
• Low power consumption application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5; f = 20 kHz; T_sp ≤ 130 °C;
square wave
T_j = 25 °C
I_F = 10 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
V_R = 10 V; t_p ≤ 3 ms; δ = 0.3;
T_j = 25 °C; pulsed
V_R = 45 V; t_p ≤ 3 ms; δ = 0.3;
T_j = 25 °C; pulsed
Min Typ Max Unit
-
-
10
A
-
-
45
V
-
473 540 mV
-
13
30
µA
-
150 500 µA
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