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| PMEG45A10EPD Datasheet, PDF (5/13 Pages) NXP Semiconductors – 45 V, 10 A low VF MEGA Schottky barrier rectifier | |||
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NXP Semiconductors
PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
trr
V(BR)R
VFRM
Characteristics
Parameter
Conditions
forward voltage
IF = 1 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 2 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 3 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
IF = 10 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
reverse current
VR = 5 V; tp ⤠3 ms; δ = 0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ⤠3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ⤠3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 45 V; tp ⤠3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 10 V; tp ⤠3 ms; δ = 0.3;
Tj = 125 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time ; IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
step recovery
Tj = 25 °C
reverse recovery time ; dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
ramp recovery
VR = 26 V
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ⤠1.2 ms; δ =
0.12; pulsed
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
-
330 380 mV
-
357 -
mV
-
377 -
mV
-
409 470 mV
-
473 540 mV
-
10
-
µA
-
13
30
µA
-
36
-
µA
-
150 500 µA
-
11
-
mA
-
715 -
pF
-
240 -
pF
-
21
-
ns
-
13
-
ns
45
-
-
V
-
317 -
mV
PMEG45A10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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