PMEG45A10EPD Datasheet, PDF (3/13 Pages) NXP Semiconductors – 45 V, 10 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
Symbol
T_stg
Parameter
storage temperature
Conditions
Min Max Unit
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm}²_.
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
9. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] -
-
165 K/W
[1][3] -
-
120 K/W
[1][4] -
-
50
K/W
[5]
-
-
4
K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm}²_.
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[5] Soldering point of cathode tab.
10³
Z_th(j-a)
(K/W)
10²
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
1
0
aaa-012456
10^-1
10^-3
10^-2
10^-1
1
FR4 PCB, standard footprint
10
10²
10³
t_p (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG45A10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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