PDTA143ZMB Datasheet, PDF (6/11 Pages) NXP Semiconductors – PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

NXP Semiconductors
PDTA143ZMB
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
8
C_c
(pF)
6
4
006aac828
10³
f_T
(MHz)
10²
006aac763
2
0
0
-10
-20
-30
-40
-50
V_CB (V)
f = 1 MHz; T_amb = 25 °C
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
8. Test information
10
-10^-1
-1
-10
-10²
I_C (mA)
V_CE = -5 V; T_amb = 25 °C
Fig 9. Transition frequency as a function of collector
current; typical values of built-in transistor
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PDTA143ZMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 June 2012
© NXP B.V. 2012. All rights reserved.
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