PDTA143ZMB Datasheet, PDF (5/11 Pages) NXP Semiconductors – PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

NXP Semiconductors
PDTA143ZMB
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
10³
h_FE
10²
006aac824
(1)
(2)
(3)
10
1
-10^-1
-1
-10
-10²
I_C (mA)
V_CE = -5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = -40 °C
Fig 4. DC current gain as a function of collector
current; typical values
006aac826
-10
V_I(on)
(V)
-1
(1)
(2)
(3)
-1
V_CEsat
(V)
-10^-1
006aac825
(1)
(2)
(3)
-10^-2
-10^-1
-1
-10
-10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = -40 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac827
-10
V_I(off)
(V)
-1
(1)
(2)
(3)
-10^-1
-10^-1
-1
-10
-10²
I_C (mA)
V_CE = -0.3 V
(1) T_amb = -40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. On-state input voltage as a function of collector
current; typical values
-10^-1
-10^-1
-1
-10
I_C (mA)
V_CE = -5 V
(1) T_amb = -40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Off-state input voltage as a function of collector
current; typical values
PDTA143ZMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 June 2012
© NXP B.V. 2012. All rights reserved.
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